• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
  • 引用文献
  • 法律状态
  • 优先权
    • 专利摘要:
    The invention relates to a method of forming a graphene device, the method comprising: forming a graphene film (100) on a substrate; depositing, by gas phase deposition, a polymeric material covering a surface of the graphene film (100); and removing the substrate from the graphene film (100), the polymeric carrier material (102) for the graphene film (100).
    公开号:FR3033554A1
    申请号:FR1551931
    申请日:2015-03-09
    公开日:2016-09-16
    发明作者:Dipankar Kalita；Vincent Bouchiat；Laetitia Marty；Nedjma Bendiab
    申请人:Centre National de la Recherche Scientifique CNRS；Universite Joseph Fourier (Grenoble 1)；
    IPC主号:
    专利说明:

    [0001] TECHNICAL FIELD This invention relates to the field of partially formed graphene devices, and a method of forming a graphene device.
    [0002] DESCRIPTION OF THE PRIOR ART Graphene is a substance composed of carbon atoms forming a crystal lattice of an atom of thickness. Various applications have been proposed for graphene, including its use in radio frequency transistors and for forming highly conductive and flexible transparent electrodes, as for displays. It is particularly advantageous for applications where high mobility drivers are desired. Most applications of graphene require a macroscopically sized graphene layer, comprising one or a few layers of carbon atoms, which is transferred to a substrate of a selected material depending on the particular application. Graphene is generally formed using a chemical vapor deposition (CVD) process, in which graphene is deposited on a base substrate such as a copper foil. However, a difficulty is that it is relatively difficult to remove the graphene layer from the base substrate without damaging or polluting the graphene layer and / or degrading its conductivity. In addition, in some embodiments it would be desirable to have a method of forming a three-dimensional graphene (3D) device. There is thus a need in the art for an improved method of forming a graphene device, and one or more devices formed based on such a method. SUMMARY An object of embodiments of the present disclosure is to at least partially solve one or more needs of the prior art. In one aspect, there is provided a method of forming a graphene device, the method comprising: forming a graphene film on a substrate; depositing, by gas phase deposition, a polymeric material covering a surface of the graphene film; and removing the substrate from the graphene film, the polymeric material forming a support for the graphene film. In one embodiment, the polymeric material comprises a polymer of the n-xylylene family. According to one embodiment, the polymeric material comprises parylene. According to one embodiment, the polymer layer is deposited with a thickness of between 10 nm and 5 mm. According to one embodiment, the graphene film is formed on a three-dimensional surface of the substrate. According to one embodiment, the removal of the substrate from the graphene film is accomplished by an electrochemical delamination process or by using an acid etch. According to one embodiment, the method is for forming a detection device to be placed on a three-dimensional shape, wherein: the substrate on which the graphene film is formed comprises a mold having the shape of the three-dimensional shape. According to one embodiment, the mold consists of a first material and at least one zone of a second material; during the formation of the graphene film, graphene selectively forms on said at least one zone of the second material and not on the first material; and the polymeric material is deposited on the graphene film and at least a portion of the first material. According to one embodiment, the method further comprises, after removing the substrate from the graphene film, performing another gas phase deposition of the polymeric material to encapsulate the graphene film. According to one embodiment, the graphene film is deposited so as to form a conductive track having a sinuous shape in a detection zone. According to one embodiment, the graphene film is deposited in the form of a first graphene plate formed in a detection zone and connected to a first conductive track, and the method further comprises: forming another graphene film covered with another deposit of polymeric material, the other graphene film being deposited in the form of a second graphene plate; and assembling the first and second graphene films such that the first and second graphene plates form a capacitive interface in the detection zone, separated by a layer of the polymeric material.
    [0003] According to another aspect there is provided a detection device comprising: a graphene film covered on at least one side by a polymer material comprising, on a portion of its inner surface, a detection element consisting of a graphene film, the material polymer contacting and supporting the graphene film. In one embodiment, the sensing element includes a serpentine conductive track formed in a sensing area and electrically connecting a first conductive track to a second conductive track.
    [0004] According to one embodiment, the detection element comprises first and second graphene plates, overlapping at least partially, the first graphene plate being connected to a first conductive track, and the second 5 graphene plate being connected to a second conductive track. According to one embodiment, the graphene device comprises a detection circuit coupled to the first and second conductive tracks.
    [0005] Brief Description of the Drawings The above-mentioned and other features and advantages will be apparent from the following detailed description of embodiments, given by way of illustration and not limitation with reference to the accompanying drawings in which: Figure 1 is a sectional view of a graphene device according to an embodiment of the present description; Figure 2 schematically illustrates an apparatus for forming a graphene device according to an exemplary embodiment of the present description; FIGS. 3A to 3C are sectional views of the formation of a graphene device according to an embodiment of the present description; Figs. 4A-4C are sectional views of the formation of a 3D graphene device according to an embodiment of the present disclosure; FIG. 5A illustrates a detection device comprising graphene according to an exemplary embodiment of the present description; Figs. 5B to 5D are sectional views showing steps of a method of forming a detection device of Fig. 5A according to an exemplary embodiment; FIG. 6 illustrates a detection element of the detection device of FIG. 5A in more detail according to an exemplary embodiment; Figure 7 illustrates a virtual keyboard arrangement 5 according to an exemplary embodiment; FIG. 8A illustrates in a flat view a detection element of the detection device of FIG. 5A in more detail according to an alternative embodiment; and FIG. 8B is a sectional view of the detecting device of FIG. 5A including the detecting element of FIG. 8A according to an example embodiment of the present description. For ease of illustration, the various figures are not drawn to scale.
    [0006] DETAILED DESCRIPTION In the present description, the term "connected" is used to denote a direct electrical connection between two elements, while the term "coupled" is used to designate an electrical connection between two elements, which may be direct, or through one or more other components such as resistors, capacitors or transistors. In addition, as used herein, the term "substantially" is used to refer to a range of +/- 10% of the value in question.
    [0007] FIG. 1 is a sectional view of a graphene device comprising a graphene film 100, which for example has a thickness of only one atom, or which may have a thickness of up to 8 layers of atoms in some embodiment, depending on the application and the desired electrical conductivity. In particular, the graphene film 100 consists for example of a plurality of graphene monolayers attached together. In some embodiments, the graphene film 100 is doped to reduce its surface resistance, for example using P dopants such as AuC13 and / or HNO3. In addition to or instead, layers of one or more dopants such as FeCl 3 may be sandwiched between one or more of the graphene layers to reduce the strength of the element. For example, such a technique is described in more detail in the publication "Novel Highly Conductive and Transparent Graphene-Based Conductors", I. Khrapach et al., Advanced Materials 2012, 24, 2844-2849. In a top view (not shown in FIG. 1) the graphene film 100 may be of any shape, and for example has an area of between 1 gm 2 and 10 am 2, depending on the application. The graphene film 100 is covered with a support 102 in the form of a layer of a polymeric material. The polymeric material is for example selected from the family of n-xylylenes, and in one example comprises parylene. Parylene has the advantage of being able to stretch up to 200% before breaking, and is able to remain flexible over a relatively large temperature range. In one example, the polymeric material comprises parylene C or parylene N. Parylene C and parylene N both have the advantage of being relatively elastic, whereas parylene 20 N has a slightly lower Young's modulus, and Thus, a higher elasticity with respect to parylene C. As will be described in more detail below, the polymer support 102 has for example been formed by a gas phase deposition technique or by a spin coating technique. . The polymer support 102 has for example a thickness of between 10 nm and a few tens or hundreds of pin, or up to 5 mm, depending on the application. Although in the example of FIG. 1, the polymer support is in the form of a layer having a substantially uniform thickness, as will be apparent from the embodiments described hereinafter, the polymer support could take other forms, depending on the particular applications.
    [0008] The combination of a graphene film 100 and a polymer support 102 provides a multilayer which can have a relatively high electrical conductivity while remaining flexible and strong. Of course, whereas in the multilayer of FIG. 1 there are only two layers, the graphene layer and the parylene layer forming a bilayer, in alternative embodiments there could be one or more other layers . For example, the graphene layer could be sandwiched between layers of parylene on each side, and / or one or more layers of other materials could be formed in contact with the graphene or parylene layer. In addition, the use of a polymer such as parylene results in a device that is biocompatible, making the device suitable for various applications in which it can for example be in contact with human or animal tissues. Figure 2 illustrates an apparatus 200 for forming a graphene device such as the device of Figure 1 according to an exemplary embodiment. The step of forming the graphene film 100 involves, for example, the formation of graphene monolayers using the apparatus 200. A similar apparatus is described in the publication entitled "Homogeneous Optical and Electronic Properties of Graphene Due to the Suppression of Multilayer". Patches During CVD on Copper Foils ", Z. Han et al., Adv. Funct.
    [0009] Mater., 2013, D01: 10.1002 / adfm.201301732. The apparatus 200 includes a reaction chamber 202 in which the graphene film is formed. For example, the reaction chamber 202 is a tubular furnace or other type of chamber that can be heated.
    [0010] A substrate 204, for example a copper foil having a thickness between 0.1 and 100 μm, is placed in the chamber 202. The substrate 204 provides a surface suitable for graphene formation. In particular, the material of the substrate 204 is for example selected so as to provide a catalyst for the formation of graphene, and has for example a relatively low solubility of carbon. For example, other possible materials for forming substrate 204 include other metals such as nickel, cobalt, or ruthenium, or copper alloys such as copper and nickel, copper, and cobalt alloys. copper and ruthenium, or dielectric materials, such as zirconium dioxide, hafnium oxide, boron nitride and aluminum oxide. In some embodiments, rather than being in the form of a sheet, the 204 substrate could have a 3D three-dimensional shape. The dimensions of such a substrate 204 could be between 0.1 μm and several cm or more. In addition, the substrate 204 could be formed on a flat or 3D surface of another substrate, for example copper or another material such as sapphire. An inlet 206 of the reaction chamber 202 makes it possible to introduce gases into the chamber, and an outlet 208 makes it possible to extract the gases from the chamber. The inlet 206 is for example supplied with gas by three gas tanks 210A, 210B and 201C, which in the example of FIG. 2 respectively contain hydrogen (H2), argon (Ar), and methane (CH4). In alternative embodiments described in more detail below, different gases could be used. In particular, rather than hydrogen, a different etching gas could be used, in other words a gas that is reactive or reacts with carbon, such as oxygen. Rather than argon, one could use another inert gas such as helium. This gas is for example used to control the overall pressure in the reaction chamber 202, and could be omitted completely in some embodiments. Rather than methane, a different organic compound gas could be used, such as butane, ethylene or acetylene. The inlet 206 is coupled to the tank 210A via a tube 212A comprising a valve 214A; to tank 210B through a tube 212B comprising a valve 214B; and the tank 2100 via a tube 2120 comprising a valve 2140. The valves 214A to 2140 control the flow rates of the respective gases in the chamber. The valves 214A-214C are, for example, electronically controlled by a computing device 216. The computing device 216 includes, for example, a processing device 218, under the control of an instruction memory 220 storing program code to control at least a part of the graphene formation process.
    [0011] The outlet 208 is for example coupled via a tube 222 to an evacuation pump 224 for evacuating gases from the reaction chamber 202. The evacuation flow rate by the pump 224 is, for example, also controlled by the 216. As shown by an arrow 226, the computing device may also control one or more heating elements of the reaction chamber 202 to heat the interior of the chamber during the process of forming graphene. A method of forming a graphene film using the above-described apparatus is for example described in more detail in US Patent Application Publication No. US2014 / 0326700, the contents of which are considered to be included herein. In addition, a deposition chamber 228 is for example provided for depositing the polymer layer on the graphene film. In the embodiment of FIG. 2, a flap 230 in a wall of the chamber 202 and a passage 231 between the chambers 202 and 228 allow the substrate 204 with the graphene film to be transferred to enter the chambers. 202 and 228 without being exposed to the atmosphere. In alternative embodiments, the deposition chambers 202 and 228 could be separated from each other, and the substrate 204 provided with the graphene film could be transferred without using a passageway. The deposition chamber 228 includes, for example, an inlet 232 coupled through another valve 214D to a feed chamber 234 for providing a precursor for depositing the polymeric material to cover the graphene film. The valve is for example controlled by the computer device 216. As mentioned above, the polymer material is for example deposited using a gas phase deposition. The term "gas phase deposition" is herein understood to include physical vapor deposition (PVD), chemical vapor deposition (CVD), and atomic layer deposition (ALD). The precursor is, for example, heated in the feed chamber 234 at a temperature between 100 ° C and 500 ° C before being introduced as a vapor phase into the chamber 228 via the valve 214D. Figs. 3A to 3C are cross-sectional views of a graphene device during manufacture, using the apparatus of Fig. 2, for example as shown in Fig. 3A, initially by CVD on a copper. It is assumed that a graphene film 100 has been formed as a substrate 204, which is, for example, a sheet of FIG. 3B illustrating an operation in which the polymer support is deposited by coating the graphene film 100. In the example of FIG. 3B, the graphene is deposited on a relatively flat substrate 204, and the polymeric material is deposited in the form of a conformal layer 302 of substantially uniform thickness which encapsulates the device, including the substrate 204. For example, the device is suspended so that the polymer is deposited on all sides of the device. Alternatively the device could be returned during the filing process. In still other embodiments, the polymeric material could be deposited only on the graphene film 100. In addition, rather than being deposited as a layer, the polymeric material could be deposited under other forms, as will be described in more detail below. FIG. 3C illustrates a subsequent operation in which the substrate 204 is removed, for example by an etching step or delamination of the polymer layer provided with the graphene film 100 from the substrate 204. For example, the step Etching involves the removal of the polymeric coating covering the substrate 204, for example using plasma etching, or scraping with a sharpened blade, to expose the surface of the substrate. SUMMARY OF THE INVENTION The substrate is then removed, for example using appropriate etching, such as acid etching or using an electrolysis technique. For example, an electrochemical delamination process can be carried out as described in more detail in the publication entitled "Electrochemical delamination of CVD-Grown Graphene Film: Toward the Recyclable Use of Copper Catalyst", Yu Wang et al. the graphene film 100 with the polymeric support 102. The present inventors have found that this polymeric support 102 not only repairs within certain limits all defects in the graphene film 100, but also limits further degradation of the graphene film 100 during separating the graphene film 100 from the substrate 204. An advantage of the method described herein is that no transfer operation is necessary, which reduces the risk that the properties of the graphene film are degraded.
    [0012] Indeed, graphene is generally formed using a chemical vapor deposition (CVD) process in which graphene is formed on a base substrate such as a copper foil. However, a difficulty is that it is relatively difficult to remove the graphene layer from the base substrate without damaging or polluting the graphene layer and / or degrading its conductivity. By depositing a polymeric material by gas-phase deposition in contact with the graphene film, the polymer can remain attached to graphene while the substrate is removed, for example by etching or by a delamination process, without a transfer step. The method of forming a graphene device as described in connection with FIGS. 3A-30 may be adapted to form a number of particular graphene devices as will now be described in FIG. 4A to 4C are sectional views showing steps in a method of forming a graphene device comprising a three-dimensional graphene film according to an exemplary embodiment. For example, such a device is suitable for being placed on or over a 3D shape, such as a limb of a human or animal, or a device or part of a device, and provides for example a function sensor, or protective barrier, or the like. Figure 4A illustrates an exemplary sectional view of a mold 402 on which the graphene device is to be formed. The 3D shape of this mold 402 shown in FIG. 4A is only one example used for illustration, and many different shapes would be possible depending on the particular application. The mold is made of a material that supports the growth of graphene, such as copper. Fig. 4B illustrates operations in which a graphene film 100 is formed on the mold 402, and a polymer coating 20, such as parylene, is then deposited on the graphene film 100. Fig. 4C illustrates a following operation in which the mold is removed, for example by an etching step or by delaminating the polymer layer provided with the graphene film 100 from the substrate 204, for example by using a delamination operation as previously described. Fig. 5A illustrates a detection device 500, which in this example is adapted to be worn by a user over his or her index finger or other body part. Of course, the technique which will be shown in connection with FIG. 5A could be applied to various different types of sensors having one or more sleeves or tubes adapted to fit around a body part of a human or a human body. an animal. For example, the sensor could be in the form of a glove provided with a sensor in each finger of the glove to detect movements of the fingers. Detection device 500 of FIG. 5A comprises a layer of a polymer such as parylene in the form of a sleeve or tube 502 which has dimensions which match those of a user's index. In the example of Figure 5A, the sleeve 502 is closed at one end to form a finger. A graphene film is formed on a portion of the inner surface of the sleeve 502, and provides an electrode 504 and a conductive track 506. The electrode 504 is positioned to contact a portion of the underside of a finger near the the end of the finger. The electrode 504 is coupled through the conductive track 506 at one end 508 of the sleeve 502 opposite the end of the finger. Although not shown in FIG. 5A, the end of the conductive track may be coupled by wire to a monitoring equipment, or a monitoring device may be implemented by an integrated circuit mounted on one side. Figs. 5B to 5D are sectional views of the detecting device 500 of Fig. 5A during steps of a method for forming the detecting device of Fig. 5A. The sections of FIG. 5B to 5D correspond, for example, to a line AA shown in FIG. 5A, which passes through a portion of the sleeve 502 near the end of the finger and passing through the electrode 504. As shown in FIG. 5B, the finger-shaped mold 510 which has the same or approximately the same dimensions as the index to be used in the detection device 500 is formed, for example, of a material which does not support the growth of the graphene, like aluminum oxide. A thin deposition 512 of a material such as copper, which supports the growth of graphene, is formed in the area where the electrode 504 and the conductive track 506 are to be formed.
    [0013] For example, in order to form the deposited copper material 508 or another material, one or two methods must be used. A first method is for example described in more detail in the publication by J. Zhang et al. entitled "Electron Beam Lithography on Irregular Surfaces Using an Evaporated Resist", ACS Nana 2014, 8 (4), pp 3483-3489. According to such a lithography method, an electron or photon sensitive resin is vaporized depending on the type of lithography to be used and the desired resolution. Such a resin can be applied to non-planar surfaces with a desired pattern, followed by a lithography operation. A second method is for example described in more detail in J. Chang et al. entitled "Easy 15 electron-beam lithography technique for irregular and fragile substrates", Applied Physics Letters 105, 173109 (2014). According to this technique, a resin film is prepared in advance by spin coating and annealing. In this annealing, the resin film becomes solid and flexible, and can be transferred to the non-planar surface and it will follow its 3D shape.A lithography step can then be performed.As shown in FIG. then for example placed in a CVD chamber such as the chamber 202 of the apparatus of Figure 2, and a graphene film 100 is selectively formed on the deposition 512. The polymer layer having the shape of the sleeve 502 is then formed by depositing a polymer layer on the mold, including over the graphene film 100. For example, the polymer coating has a thickness of between 50 and 500 μm, where this polymer deposit contacts the 30 gram film. aphene 100, it provides the polymer support for the graphene film 100. As shown in FIG. 5D, the polymer sleeve 502, and the graphene film 100, are for example removed from the graphene 100. mold, for example by a delamination process or an electrochemical delamination process as previously described. Although in the example of FIG. 5A the detection device 500 comprises a single graphene conductive path 506 leading to a graphene plate forming the electrode 504, many other arrangements would be possible, as will now be described in FIG. 6 illustrates the shape of a graphene film 100 of the detection device 500 of FIG. 5A, according to an example in which two conducting tracks 602, 604 are provided, leading to the electrode , and the electrode is implemented in the form of a sinuous track electrically connecting the track 602 to the track 604 and provided with a detection zone 606. The tracks 602, 604 and the sinuous track are for example formed in using the lithography or spin coating method described above in connection with FIG. 5B. The conductive tracks 602, 604 are for example coupled to a detection circuit 608 for detecting a change in the resistance of the conductive track formed in the detection zone. For example, the circuit 608 is adapted to apply a substantially constant current in the conductive tracks 602, 604 and to monitor the voltage drop between the conductive tracks 602, 604. The pressure applied to the graphene film in the zone 606 causes the for example, a change in the resistance of the graphene film by deforming the graphene film and / or by causing a short circuit between sections of the sinuous conductive track. Such a change in the resistor causes a corresponding change in the voltage across the conductive tracks, a change that is detected by the sense circuit 608. In one embodiment, the sensing device of Fig. 6 is used in a system. key detection system, as will now be described in more detail with reference to FIG. 7.
    [0014] Fig. 7 illustrates a virtual keyboard system in which a projector 702 is provided, in this example mounted above a display 704. The projector 702 projects an image 706 of a user interface. on a surface. In Example 5 of Figure 7, the user interface is a keyboard, but in alternative embodiments, one could project other types of user interface. For example, the image on the screen could be projected to provide the functionality of a touch screen. In such a case, the display 704 could be omitted.
    [0015] The system also includes, for example, a 3D distance measuring camera for detecting key strike events made by a user on the projected image of the keyboard. Such a virtual keyboard system is for example described in the publication by Huan Du et al., Entitled "A Virtual 15 Keyboard Based on True-3D Optical Ranging", Proceedings of the British Machine Vision Conference, vol. 1, p. 220 - 229. A difficulty in such a virtual keyboard system is to confirm a typing event that has been detected visually. For example, a user may move a finger 20 toward a key position with the intention of making a keystroke, but then retire just before touching the key position. Such an uncompleted keypress can be interpreted as a real keystroke based only on information or visual data. To solve this problem, the user has for example one or more detection devices similar to those of Figures 5 and 6 attached to one or more fingers. For example, the user wears gloves 708, 710 on his right hand 30 and his left hand respectively, including such a detection device on one, on several or all of his fingers. Although the serpentine graphene track of FIG. 6 provides a possible means for detecting a pressure exerted in the detection zone 606, other techniques can be used, as will now be described in FIG. reference to Figures 8A and 8B. FIG. 8A is a top view of a detection device comprising two graphene films, respectively comprising conductive tracks 802 and 804. The conductive track 802 is connected to one end of a graphene plate 806, while the Conductive track 804 is connected to one end of a graphene plate 808. The graphene plates 806, 808 are arranged so that they overlap, and are separated by a deformable insulating layer (not shown in FIG. 8A). so that they have an associated ability. An external compressive force applied to the plates 806, 808, caused for example by a finger striking a surface, will thus change the distance between the plates and cause a change in their capacitance, which can be detected by a detection circuit 809. coupled to the conductive tracks 802, 804. Figure 8B is a sectional view of a sensing device 800 similar to the device 500 of Figure 5A, but adapted to include the sensing device of Figure 8A. The device 800 comprises for example an outer polymer sleeve 810, having formed on it the plate 808 and the conductive track 804 (not shown in Figure 8B) running along the length of the sleeve. Such a structure is for example formed by the method described with reference to Figs. 5B to 5D. The device 800 also includes, for example, an inner polymeric sleeve 812, having formed on an outer surface, the graphene plate 806, disposed adjacent the graphene plate 808, and the conductive track 802 (not shown in FIG. 8B). This structure can also be formed by the process of Figs. 5B-5D, then rotating the finger from the inside out so that the graphene plate 806 is on the outer side of the inner polymer sleeve 812. Polymeric sleeve 812 is then positioned as an inner liner of polymeric sleeve 810 to obtain the structure of FIG. 8B. The graphene plates 806, 808 are separated by an insulating layer 814, consisting for example of polymer, and which may comprise a polymer coating formed on the graphene plate 806 and / or a polymer coating formed on the graphene plate 808. In use, the sensing device 800 is placed on a finger or other body part. A charge is then for example stored on one of the plates 806, 808 by applying a voltage between the conductive tracks 802, 804, for example 10 by the detection circuit 809. The graphene plates 806, 808 then form a zone of detection such that if pressure is applied to this area, the capacity of the plates 806, 808 will change, causing a change in the voltage on the conductive tracks 802, 804. This voltage change can be detected by the sense circuit 809 An advantage of the graphene device described herein is that the polymer layer supports the graphene film 100, helping to maintain relatively strong relative properties of the graphene film 100 when removed from the mold.
    [0016] An advantage of the sensing device described herein is that the polymer coating provides a support layer which remains flexible while maintaining a graphene electrode in a position suitable for detecting an event such as a keystroke.
    [0017] With the description thus made of at least one illustrative embodiment, various alterations, modifications and improvements will be readily apparent to those skilled in the art. For example, it will be apparent to one skilled in the art that although various devices comprising graphene have been described herein and shown in FIGS. 30, there are numerous variations of application of the method of forming the multilayer of graphene and polymer as described herein. In addition, the various elements described in connection with the various embodiments could be combined in any combination in alternative embodiments. Such alterations, modifications and improvements are intended to be encompassed within the scope of the invention. Accordingly, the foregoing description is given by way of example only and is not intended to be limiting. The invention is limited only by the following claims and their equivalents.
    权利要求:
    Claims (15)
    [0001]
    REVENDICATIONS1. A method of forming a graphene device, the method comprising: forming a graphene film (100) on a substrate (204); depositing, by gas phase deposition, a polymeric material covering a surface of the graphene film (100); and removing the substrate (204) from the graphene film (100), the polymeric support material (102) for the graphene film (100).
    [0002]
    2. The process of claim 1 wherein the polymeric material comprises a polymer of the nxylylene family.
    [0003]
    The method of claim 1 or 2, wherein the polymeric material comprises parylene.
    [0004]
    4. A process according to any one of claims 1 to 3, wherein the polymer layer is deposited with a thickness between 10 nm and 5 mm.
    [0005]
    The method of any one of claims 1 to 4, wherein the graphene film (100) is formed on a three-dimensional surface of the substrate (204). 20
    [0006]
    The method of any one of claims 1 to 5, wherein removing the substrate (204) from the graphene film (100) is accomplished by an electrochemical delamination process or by using an acid etch.
    [0007]
    7. A method according to any one of claims 1 to 6 for forming a detection device (500) to be placed on a three-dimensional shape, wherein: the substrate on which the graphene film (100) is formed comprises a mold ( 510) having the shape of the three-dimensional shape. 30
    [0008]
    The method of claim 7, wherein: the mold (510) is comprised of a first material and at least one area (504, 506) of a second material; During the formation of the graphene film (100), graphene is selectively formed on said at least one zone of the second material and not on the first material; and the polymeric material is deposited on the graphene film (100) and at least a portion of the first material.
    [0009]
    The method of claim 7 or 8, further comprising, after removing the substrate from the graphene film, performing another gas phase deposition of the polymeric material to encapsulate the graphene film (100). 10
    [0010]
    The method of claim 8 or 9, wherein the graphene film (100) is deposited to form a conductive track having a sinuous shape in a detection zone (606).
    [0011]
    The method of claim 8 or 9, wherein the graphene film is deposited as a first graphene plate (806) formed in a detection zone and connected to a first conductive track (802), and wherein the method further comprises: forming another graphene film coated with another polymeric material deposit, the other graphene film being deposited as a second graphene plate (808); and assembling the first and second graphene films such that the first and second graphene plates (806, 808) form a capacitive interface in the detection zone, separated by a layer (814) of the polymeric material.
    [0012]
    A sensing device formed by the method of claim 1 comprising: a sensing element (504, 606, 806, 808) made of the graphene film (100) formed on a portion of the inner surface of the polymeric material, the polymeric material contacting and supporting the graphene film (100).
    [0013]
    The sensing device according to claim 12, wherein the sensing element comprises a serpentine conductive track formed in a sensing area (606) and electrically connecting a first conductive track (602) to a second conductive track (604).
    [0014]
    The sensing device according to claim 12, wherein the sensing element comprises first and second graphene plates (806, 808) overlapping at least partially, the first graphene plate (806) being connected to a first track conductive, and the second graphene plate (808) being connected to a second conductive track.
    [0015]
    The sensing device of claim 13 or 14, further comprising a sensing circuit (608, 809) coupled to the first and second conductive tracks.
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    同族专利:
    公开号 | 公开日
    EP3268312A1|2018-01-17|
    CN107667071A|2018-02-06|
    WO2016142400A1|2016-09-15|
    US20180057361A1|2018-03-01|
    FR3033554B1|2020-01-31|
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    WO2015020610A1|2013-08-05|2015-02-12|National University Of Singapore|Method to transfer two dimensional film grown on metal-coated wafer to the wafer itself in a face-to-face manner|
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    优先权:
    申请号 | 申请日 | 专利标题
    FR1551931|2015-03-09|
    FR1551931A|FR3033554B1|2015-03-09|2015-03-09|PROCESS FOR FORMING A GRAPHENE DEVICE|FR1551931A| FR3033554B1|2015-03-09|2015-03-09|PROCESS FOR FORMING A GRAPHENE DEVICE|
    CN201680026619.7A| CN107667071A|2015-03-09|2016-03-09|The method for forming graphene device|
    US15/557,039| US20180057361A1|2015-03-09|2016-03-09|Method of forming a graphene device|
    PCT/EP2016/054963| WO2016142400A1|2015-03-09|2016-03-09|Method of forming a graphene device|
    EP16709366.5A| EP3268312A1|2015-03-09|2016-03-09|Method of forming a graphene device|
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